TY  - JOUR

T1  - Gate oxide degradation condition monitoring technique for high-frequency applications of silicon carbide power MOSFETs

JO  - IEEE Transactions on Power Electronics

PY  - 2022/08/11

AU  - Naghibi J

AU  - Mohsenzade S

AU  - Mehran K

AU  - Foster MP

ED  - 

DO  - DOI: 10.1109/tpel.2022.3198291

PB  - Institute of Electrical and Electronics Engineers (IEEE)

VL  - 38

IS  - 1

SP  - 1079

EP  - 1091

Y2  - 2024/09/19

ER  -