TY  - JOUR

T1  - High-power InGaN light emitting diodes grown by molecular beam epitaxy

JO  - Electronics Letters

PY  - 2004/01/01

AU  - Johnson K

AU  - Bousquet V

AU  - Hooper SE

AU  - Kauer M

AU  - Zellweger C

AU  - Heffernan J

ED  - 

DO  - DOI: 10.1049/el:20046144

PB  - Institution of Engineering and Technology (IET)

VL  - 40

IS  - 20

SP  - 1299

EP  - 1299

Y2  - 2024/09/21

ER  -