TY  - CONF

T1  - Evaluation of Drain-Source Voltage in Switch Transient Time Intervals as
Gate Oxide Degradation Precursor of SiC Power MOSFETs

CY  - Hannover, Germany

JO  - 24th European Conference on Power Electronics and Applications  EPE'22 ECCE Europe

PY  - 2022/09/05

AU  - Foster M

AU  - Naghibi J

AU  - Mohsenzade S

AU  - Mehran K

ED  - 

Y2  - 2024/09/19

ER  -