TY  - JOUR

T1  - Effect of buffer layer preparation on GaN epilayers grown by gas-source molecular-beam epitaxy

JO  - Applied Physics Letters

PY  - 2001/02/05

AU  - Bousquet V

AU  - Heffernan J

AU  - Barnes J

AU  - Hooper S

ED  - 

DO  - DOI: 10.1063/1.1344227

PB  - AIP Publishing

VL  - 78

IS  - 6

SP  - 754

EP  - 756

Y2  - 2024/09/21

ER  -