TY  - JOUR

T1  - Temperature-induced carrier escape processes studied in absorption of individual InxGa1-xAs quantum dots

JO  - PHYS REV B

PY  - 2004/04/01

AU  - Oulton R

AU  - Tartakovskii AI

AU  - Ebbens A

AU  - Cahill J

AU  - Finley JJ

AU  - Mowbray DJ

AU  - Skolnick MS

AU  - Hopkinson M

ED  - 

DO  - DOI: 10.1103/PhysRevB.69.155323

VL  - 69

IS  - 15

Y2  - 2024/09/20

ER  -