TY  - JOUR

T1  - InGaN laser diodes and high brightness light emitting diodes grown by molecular beam epitaxy

JO  - Journal of Crystal Growth

PY  - 2005/05/01

AU  - Hooper SE

AU  - Kauer M

AU  - Bousquet V

AU  - Johnson K

AU  - Zellweger C

AU  - Heffernan J

ED  - 

DO  - DOI: 10.1016/j.jcrysgro.2004.12.049

PB  - Elsevier BV

VL  - 278

IS  - 1-4

SP  - 361

EP  - 366

Y2  - 2024/09/21

ER  -